inchange semiconductor product specification silicon npn power transistors BUX47 description with to-3 package high voltage ,high speed applications intended for high voltage,fast switching applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 850 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 9 a i cm collector current-peak 15 a i b bast current 8 a i bm bast current-peak 10 a p t total power dissipation t c =25 125 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.2 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BUX47 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a; i b =0;l=25mh 400 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0; 7 30 v v cesat-1 collector-emitter saturation voltage i c =6a;i b =1.2 a 1.5 v v cesat-2 collector-emitter saturation voltage i c =9a;i b =3 a 3 v v besat base-emitter saturation voltage i c =6a;i b =1.2 a 1.6 v i cev collector cut-off current v ce =850v;v be =-2.5v t c =125 0.15 1.5 ma i ebo emitter cut-off current v eb =5v;i c =0 1 ma h fe dc current gain i c =1a ;v ce =5v 15 50 switching times t on turn-on time 0.8 s t s storage time 2.5 s t f fall time i c =6a;i b1 =-i b2 =1.2a; v cc =150v 0.8 s
inchange semiconductor product specification 3 silicon npn power transistors BUX47 package outline fig.2 outline dimensions
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